Method of manufacturing semiconductor device using thermal...

Details Method of manufacturing semiconductor device using thermal... Method of manufacturing semiconductor device using thermal...

2006-04-11

2006-04-11

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S782000

Reexamination Certificate

active

07026260

ABSTRACT:
A technique capable of preventing breakage of a semiconductor wafer in a single-wafer RTP apparatus is provided. Open-loop control is made in a temperature rising process, in which the temperature of the semiconductor wafer is 500° C. or lower, and a revolution speed of the semiconductor wafer is relatively reduced to 100 rpm or lower even if the bowing of the semiconductor wafer occurs. Therefore, a centrifugal force exerted on the semiconductor wafer is reduced, whereby it becomes possible to prevent the semiconductor wafer from dropping from a stage of the single-wafer RTP apparatus. Additionally, closed-loop control is made in the temperature rising process, in which the temperature of the semiconductor wafer is higher than 500° C., and in a main treatment process, and further the revolution speed of the semiconductor wafer is relatively increased. By so doing, the almost uniform in-plane temperature of the semiconductor wafer can be achieved and the bowing of the semiconductor wafer can be prevented.

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patent: 6-260426 (1994-09-01), None

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