Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2010-03-09
2011-12-27
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S617000, C438S926000, C257SE21523
Reexamination Certificate
active
08084279
ABSTRACT:
According to one embodiment of the present invention, a method of manufacturing a semiconductor device includes below steps. A step of preparing a phase shift mask and a normal photomask. A step of stacking a first wiring layer on a semiconductor substrate, and further stacking, on the first wiring layer, a second wiring layer. The second wiring layer includes a second wiring and third wiring. A step of stacking an interlayer insulating film on the second wiring layer. A step of forming, in the interlayer insulating film, a first opening in which the second wiring is exposed, and a second opening in which the third wiring is exposed by photolithography using the normal photomask. A step of burying a metal in the first opening and the second opening. A step of providing a pad to be overlaid on the first and second openings.
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Kasaoka Tatsuo
Miki Kazunobu
Mori Noboru
Sakakibara Kiyohiko
McDermott Will & Emery LLP
Renesas Electronics Corporation
Smoot Stephen W
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