Method of manufacturing semiconductor device that includes...

Details Method of manufacturing semiconductor device that includes... Method of manufacturing semiconductor device that includes...

2006-05-16

2006-05-16

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Gettering of substrate

C438S166000, C438S473000, C438S488000

Reexamination Certificate

active

07045444

ABSTRACT:
Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group18of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.

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