Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-08-10
2011-12-06
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S672000, C438S673000, C438S700000
Reexamination Certificate
active
08071474
ABSTRACT:
(a1) A concave portion is formed in an interlayer insulating film formed on a semiconductor substrate. (a2) A first film of Mn is formed by CVD, the first film covering the inner surface of the concave portion and the upper surface of the insulating film. (a3) Conductive material essentially consisting of Cu is deposited on the first film to embed the conductive material in the concave portion. (a4) The semiconductor substrate is annealed. During the period until a barrier layer is formed having also a function of improving tight adhesion, it is possible to ensure sufficient tight adhesion of wiring members and prevent peel-off of the wiring members.
REFERENCES:
patent: 7514353 (2009-04-01), Weidman et al.
patent: 2002/0022365 (2002-02-01), Ohba
patent: 2003/0124846 (2003-07-01), Chiang et al.
patent: 2005/0218519 (2005-10-01), Koike et al.
patent: 2000-349149 (2000-12-01), None
Japanese Notice of Reasons of Rejection dated Sep. 2, 2008, issued in corresponding Japanese Patent Application No. 2005-250046.
W.A. Landford et al., “Low-temperature passivation of copper by doping with Al or Mg”, Thin Solid Films, 262(1995), pp. 234-241.
T Usui et al., “Low Resistive and Highly Reliable Cu Dual-Damascene Interconnect Technology Using Self-Formed MnSixOy Barrier Layer”, IITC Session 9.2, 2005.
Kitada Hideki
Nakao Yoshiyuki
Ohtsuka Nobuyuki
Shimizu Noriyoshi
Fujitsu Semiconductor Limited
Le Dung A.
Westerman Hattori Daniels & Adrian LLP
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