Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-28
2008-08-19
Le, Dung A (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S672000, C438S673000, C438S508000
Reexamination Certificate
active
07413977
ABSTRACT:
A concave portion is formed in an interlayer insulating film formed on a semiconductor substrate. Then a first film of Mn is formed by CVD, the first film covering the inner surface of the concave portion and the upper surface of the insulating film. Then conductive material essentially consisting of Cu is deposited on the first film to embed the conductive material in the concave portion. Then the semiconductor substrate is annealed. During the period until a barrier layer is formed having also a function of improving tight adhesion, it is possible to ensure sufficient tight adhesion of wiring members and prevent peel-off of the wiring members.
REFERENCES:
patent: 2005/0218519 (2005-10-01), Koike et al.
W.A. Lanford et al., “Low-temperature passivation of copper by doping with A1 or Mg”, ThinSolid Films 262, pp. 234-241 (1995).
T Usui et al., “Low Resistive and Highly Reliable Cu Dual-Damascene Interconnect Technology Using Self-Formed MnSixOyBarrier Layer”, IITC Session 9.2, 2005.
Kitada Hideki
Nakao Yoshiyuki
Ohtsuka Nobuyuki
Shimizu Noriyoshi
Fujitsu Limited
Le Dung A
Westerman, Hattori, Daniels & Adrian , LLP.
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