Method of manufacturing semiconductor device, semiconductor...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S675000, C257SE21061

Reexamination Certificate

active

10801952

ABSTRACT:
A method of manufacturing a semiconductor device having electrodes penetrating a semiconductor substrate, the method includes the steps of forming a concave portion extending from an active surface of a semiconductor substrate on which an integrated circuit is formed to an interior of the semiconductor substrate, forming a first insulating layer on an inner surface of the concave portion, filling an inner side of the first insulating layer with an electroconductive material so as to form an electrode, exposing a distal end portion of the first insulating layer by etching a rear surface of the semiconductor substrate, forming a second insulating layer on a rear surface of the substrate, and exposing the distal end portion of the electrode by removing the first insulating layer and the second insulating layer from a distal end portion of the electrode.

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Office Action issued in counterpart Chinese Patent Application.
Communication from German Patent Office re: related application.
Communication from Korean Patent Office re: related application, no translation.

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