Method of manufacturing semiconductor device, method of...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

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Details

C438S486000, C438S016000, C438S166000, C438S795000, C257SE21134, C257SE21347, C257SE21475

Reexamination Certificate

active

07820531

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.

REFERENCES:
patent: 2003/0017658 (2003-01-01), Nishitani et al.
patent: 2005/0214959 (2005-09-01), Hatano et al.
patent: 2006-032928 (2006-02-01), None

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