Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2005-05-10
2005-05-10
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S401000, C257S797000
Reexamination Certificate
active
06890837
ABSTRACT:
A substrate surface (10S) is thermally oxidized to form an oxide film. The oxide film is patterned so that the substrate surface (10S) in an active region is exposed. An oxide film (20) is thereby provided. An exposed substrate surface (10S) is thermally oxidized, to form a thermal oxide film. This thermal oxide film is thereafter removed at least in an element forming region. A silicon film (41) is epitaxially grown on the exposed substrate surface (10S). Thereafter the silicon film (41) is polished by CMP to an extent that an upper surface of the silicon film after polishing is not more than an upper surface of the oxide film (20) in height. Next, the surface of the silicon film is thermally oxidized to form a thermal oxide film. After ion implantation of various types, this thermal oxide film is removed.
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Horita Katsuyuki
Kuroi Takashi
Shiozawa Katsuomi
Le Dung A.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
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