Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-12-05
2006-12-05
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S155000, C438S405000, C438S427000, C257SE21548, C257SE21564
Reexamination Certificate
active
07144764
ABSTRACT:
The invention relates to improvements in a method of manufacturing a semiconductor device in which deterioration in a transistor characteristic is avoided by preventing a channel stop implantation layer from being formed in an active region. After patterning a nitride film (22), the thickness of an SOI layer3is measured (S2) and, by using the result of measurement, etching conditions (etching time and the like) for SOI layer3are determined (S3). To measure the thickness of SOI layer3, it is sufficient to use spectroscopic ellipsometry which irradiates the surface of a substance with linearly polarized light and observes elliptically polarized light reflected by the surface of a substance. The etching condition determined is used and a trench TR2is formed by using patterned nitride film22as an etching mask (S4).
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Hirano Yuuichi
Iwamatsu Toshiaki
Maeda Shigenobu
Maegawa Shigeto
Matsumoto Takuji
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