Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2006-03-14
2006-03-14
Versteeg, Steven (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C427S380000, C427S383300, C438S558000, C438S197000, C438S769000
Reexamination Certificate
active
07011734
ABSTRACT:
A method of manufacturing a semiconductor device has the steps of: (a) evacuating a sputtering chamber to a pressure of 1.5×10−8torr to 9×10−8torr and heating a silicon substrate to a temperature of 330° C. to 395° C.; (b) sputtering Co on the heated silicon substrate; (c) after the step (b), forming a cap layer having a small oxygen transmission performance on the silicon substrate without exposing the silicon substrate in air; (d) after the step (c), performing primary annealing; (e) after the step (d), removing the cap layer and unreacted Co; and (f) after the step (e), performing secondary annealing by heating the silicon substrate to a temperature of 450° C. to 750° C.
REFERENCES:
patent: 5874342 (1999-02-01), Tsai et al.
patent: 6864143 (2005-03-01), Shue et al.
patent: 2003/0029715 (2003-02-01), Yu et al.
patent: 11-111642 (1999-04-01), None
patent: 11-233456 (1999-08-01), None
English translation of JP 11-233456.
English translation of JP 11-111642.
Ken Inoue et al.; IEDM 95-445, pp. 18.1.1 to 18.1.4, 1995. Discussed in the spec.
K. Goto et al.; IEDM 95-449, pp. 18.2.1 to 18.2.4, 1995. Discussed in the spec.
Fujitsu Limited
Versteeg Steven
Westerman Hattori Daniels & Adrian LLP
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