Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-12-27
2008-08-19
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257S330000, C257SE21419, C257SE21429
Reexamination Certificate
active
07413969
ABSTRACT:
A varying-width recess gate structure having a varying-width recess formed in a semiconductor device can sufficiently increase the channel length of the transistor having a gate formed in the varying-width recess, thereby effectively reducing the current leakage and improving the refresh characteristics. In the method of manufacturing the recess gate structure, etching is performed twice or more, so as to form a gate recess having varying width in the substrate, and a gate is formed in the gate recess.
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Korean Patent Gazette issued by Korean Patent Office, Aug. 8, 2006.
Text of the First Office Action issued by the Chinese Patent Office.
Kim Jong Man
Kim Jong Sik
Lee Chang Goo
Won Se Ra
Hoang Quoc
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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