Method of manufacturing semiconductor device having multilevel i

Details Method of manufacturing semiconductor device having multilevel i Method of manufacturing semiconductor device having multilevel i

1993-12-27

1997-06-10

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

20419217, 438672, 438675, 438680, H01L 2144

Patent

active

056375344

ABSTRACT:
A semiconductor device has a multilayered structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and a via hole. The semiconductor device is manufactured by a method that includes plasma etching at least one surface of the insulating interlayer the in an atmosphere having as a major component either a carbonless, chlorine-based gas or a carbonless, chlorine-based gas and an inactive gas in order to remove contaminates that would otherwise promote reactivity with aluminum CVD on the surface of the insulating interlayer.

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