Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-09-21
1998-03-10
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438629, 438638, 438648, 438672, H01L 21283, H01L 2131
Patent
active
057260982
ABSTRACT:
An underlying interconnection is formed on a semiconductor substrate, and an interlayer insulating film is formed on the semiconductor substrate and the underlying interconnection. A metal film is deposited on the interlayer insulating film, and is patterned in an interconnection pattern, and a first opening for connecting the metal film to the underlying interconnection is patterned, thereby forming an overlying interconnection. Then, a protection film is formed so as to cover the surfaces of the overlying interconnection and the interlayer insulating film. Next, a photoresist film is formed on the protection film, and is patterned to provide a second opening larger than the first opening in the protection film above the first opening and provide a third opening in a pad-portion forming region on the overlying interconnection. At the same time, with the overlying interconnection as a mask, the interlayer insulating film is selectively etched out to form a through hole. Then, a tungsten film is deposited in the through hole and on the protection film, and the unnecessary portion of the tungsten film is etched back to form a tungsten plug in the through hole which electrically connects the underlying interconnection to the overlying interconnection.
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patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4948756 (1990-08-01), Ueda
patent: 5204286 (1993-04-01), Doan
patent: 5545584 (1996-08-01), Wuu et al.
NEC Corporation
Quach T. N.
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