Method of manufacturing semiconductor device having multi-layer

Details Method of manufacturing semiconductor device having multi-layer Method of manufacturing semiconductor device having multi-layer

1997-03-25

1999-10-12

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, 438622, 438624, 438625, 438627, 438634, 438637, 438639, 438643, 438666, 438668, 438672, 438675, 438678, 438695, H01L 21316

Patent

active

059666340

ABSTRACT:
In a method of manufacturing a semiconductor device, when a copper diffusion preventing film portion on the connecting hole bottom portion is to be removed, a film thickness of other portion of the copper diffusion preventing film not to be removed is more thickly formed than that of the to-be-removed copper diffusion preventing film portion on the connecting hole bottom portion, thereby only the copper diffusion preventing film portion to be removed can be removed. The method can extend a durable length of time of a wire and can reduce a resistance of the metal wires in a connecting hole bottom portion by removing a copper diffusion preventing film on the bottom portion of the connecting hole.

REFERENCES:
patent: 5071518 (1991-12-01), Pan
patent: 5281850 (1994-01-01), Kanamori
patent: 5413962 (1995-05-01), Lur et al.
patent: 5472913 (1995-12-01), Havemann et al.
patent: 5506177 (1996-04-01), Kishimoto et al.
patent: 5818110 (1998-11-01), Cronin

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