Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Patent
1997-02-19
1999-10-26
Booth, Richard
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
438371, 438372, 438621, H01L 21331
Patent
active
059727683
ABSTRACT:
In a method of manufacturing a semiconductor device, an insulating film is formed on a surface of a p-type semiconductor region, and then removed from a selected portion of the p-type semiconductor region. An n-type region having a high concentration of arsenic atoms is formed in a surface layer of the selected portion of the p-type semiconductor region from which the insulating film is removed. Subsequently, boron ions are implanted over an entire surface of the device in a concentration that is lower than that of the n-type region and higher than that of the p-type semiconductor region, to a smaller depth than that of the n-type region, and heat treatment is then effected to form a high-concentration boron diffused region in a surface layer of the p-type semiconductor region. An insulating film on the n-type region and an insulating film on the boron diffused region are selectively removed, and a metallic film is formed on an exposed surface of the n-type region and an exposed surface of the boron diffused region.
REFERENCES:
patent: 3943621 (1976-03-01), Hartman
patent: 4717678 (1988-01-01), Goth
patent: 5374571 (1994-12-01), Mukherjee et al.
Fujihira Tatsuhiko
Nagayasu Yoshihiko
Ryokai Yoichi
Sugimura Kazutoshi
Booth Richard
Fuji Electric & Co., Ltd.
Murphy John
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