Method of manufacturing semiconductor device having contact...

Details Method of manufacturing semiconductor device having contact... Method of manufacturing semiconductor device having contact...

2011-04-12

2011-04-12

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S773000, C257SE21658, C438S666000

Reexamination Certificate

active

07923371

ABSTRACT:
A semiconductor device has a semiconductor substrate in which a plurality of device regions and a plurality of device isolation regions are alternately formed to extend in a first direction; and a plurality of contact plugs formed on the semiconductor substrate, connected to the device regions and arranged on the semiconductor substrate in a zigzag pattern in a second direction perpendicular to the first direction, wherein the contact plugs have a rectangular cross section.

REFERENCES:
patent: 2006/0276032 (2006-12-01), Arakawa et al.
patent: 2008/0113511 (2008-05-01), Park et al.
patent: 2008/0164528 (2008-07-01), Cohen et al.
patent: 2009/0316467 (2009-12-01), Liu
patent: 2010/0047984 (2010-02-01), Cohen et al.
patent: 11-330238 (1999-11-01), None

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