Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-02-09
2000-03-14
Tsai, Jey
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438649, 438682, 438279, H01L 214763
Patent
active
060372478
ABSTRACT:
The present invention provides a way how to use a technique for forming the contact of a diffusion layer in a self-alignment manner in combination with a salicide technique. The most important finding in the way is that when an insulating film is deposited over the entire surface, the insulating film deposited on a shared diffusion layer which is present in a depressed portion between two electrodes is thinner in a natural course of events than that deposited on open-surfaces of the two electrodes. When such an insulating film different in thickness is etched, the relatively thin insulating film formed on the shared diffusion layer is substantially completely removed, whereas the relatively thick insulating film formed on the two electrodes is not completely removed and remains as a thin film. Hence, if the silicide layer is formed on the diffusion layer and the electrodes before the insulating film is deposited, the insulating film formed on the shared diffusion layer is selectively removed while leaving the insulating film formed on the electrodes.
REFERENCES:
patent: 5547888 (1996-08-01), Yamazaki
patent: 5874343 (1999-02-01), Fulford, Jr. et al.
Kabushiki Kaisha Toshiba
Tsai Jey
LandOfFree
Method of manufacturing semiconductor device having a self align does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device having a self align, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device having a self align will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-168857