Method of manufacturing semiconductor device having...

Details Method of manufacturing semiconductor device having... Method of manufacturing semiconductor device having...

2011-01-18

2011-01-18

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

C257SE47001

Reexamination Certificate

active

07871866

ABSTRACT:
Provided is a method of manufacturing a semiconductor device having a switching device capable of preventing a snake current. First, a transition metal oxide layer and a leakage control layer are alternately stacked on a substrate 1 to 20 times to form a varistor layer. The transition metal oxide layer is formed to contain an excessive transition metal compared to its stable state. The leakage control layer may be formed of one selected from the group consisting of a Mg layer, a Ta layer, an Al layer, a Zr layer, a Hf layer, a polysilicon layer, a conductive carbon group layer, and a Nb layer.

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