Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-03-21
2008-09-02
Smith, Bradley K (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S530000, C438S514000, C257SE21630
Reexamination Certificate
active
07419893
ABSTRACT:
This patent specification describes methods for fabricating semiconductor device having a plurality of well structures including a triple-well structure. One example of a method for fabricating semiconductor device includes forming a thermally stable film on a first conductivity type substrate, forming a first resist film having an opening at a position corresponding to a first well forming area on the thermally stable film, removing the thermally stable film selectively by masking with the first resist film so as to make a neutering mask, implanting a second conductivity type impurity into the first well forming area by masking with the neutering mask and the first resist film, removing the first resist film, forming a second conductivity type well by diffusing and activating the second conductivity type impurity implanted into the first well forming area with a heating process, and implanting a first conductivity type impurity into a surface region of the first well forming area by masking with the neutering mask.
REFERENCES:
patent: 6309921 (2001-10-01), Ema et al.
patent: 6475846 (2002-11-01), Marotta et al.
patent: 2002/0038885 (2002-04-01), Arai
patent: 02-077153 (1990-03-01), None
patent: 09-055483 (1997-02-01), None
Cooper & Dunham LLP
Smith Bradley K
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