Method of manufacturing semiconductor device having...

Details Method of manufacturing semiconductor device having... Method of manufacturing semiconductor device having...

2007-03-20

2007-03-20

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257S401000

Reexamination Certificate

active

10490817

ABSTRACT:
The present invention relates to a method of manufacturing semiconductor device with composite buffer layers. The method includes etching grooves in n type and p type semiconductor wafers respectively. The areas of grooves in n type wafer just correspond to the areas without grooves in p type wafer, and vice versa. The grooves in both n type and p type wafers have the same depth. Two wafers are directly bonded together so that the grooves in one wafer are filled with the grooves in the other wafer. Then, chemical bonding is implemented. The bonding may also be made through thin dielectric layer (e.g. SiO2). If necessary, grinding, polishing or chemical mechanical polishing processes are carried out to remove the redundant material. Thereby, it is easy to manufacture the semiconductor device with composite buffer layer as voltage sustaining layer.

REFERENCES:
patent: 5216275 (1993-06-01), Chen
patent: 6046083 (2000-04-01), Lin et al.
patent: 6649459 (2003-11-01), Deboy et al.
patent: 6677641 (2004-01-01), Kocon
patent: 2003/0071320 (2003-04-01), Kocon
patent: 2004/0063269 (2004-04-01), Kocon
patent: 6425586 (1989-01-01), None
patent: 4034920 (1992-02-01), None
patent: 4146679 (1992-05-01), None
patent: 6077522 (1994-03-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3793769