Method of manufacturing semiconductor device for improving...

Details Method of manufacturing semiconductor device for improving... Method of manufacturing semiconductor device for improving...

2006-08-03

2008-10-21

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S675000, C438S706000, C257SE21270, C257SE21578

Reexamination Certificate

active

07439177

ABSTRACT:
In manufacturing a semiconductor device, a metal film is formed on a semiconductor substrate, and a high-temperature amorphous carbon film pattern for defining a wiring forming area is formed on the metal film. The metal film is etched by using the high-temperature amorphous carbon film pattern as an etching barrier to form a metal wiring. A low-temperature amorphous carbon film as an IMD is formed on the resultant structure so as to cover the metal wiring including the high-temperature amorphous carbon film pattern. The low-temperature amorphous carbon film and the high-temperature amorphous carbon film pattern are etched to form a contact hole, which has greater width in an upper portion than in a lower portion thereof. Finally, a plug metal film is formed on the low-temperature amorphous carbon film to fill the contact hole.

REFERENCES:
patent: 6939808 (2005-09-01), Tzou et al.
patent: 2002/0014643 (2002-02-01), Kubo et al.
patent: 10-1999-0088401 (1999-12-01), None
patent: 1020020028492 (2002-04-01), None
Notice of Preliminary Rejection, Korean Patent Appln. No. 10-2005-0106426. Mar. 21, 2007.

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