Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate
2007-01-30
2007-01-30
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
C257S686000, C257S632000, C257S778000, C257SE23065
Reexamination Certificate
active
10808398
ABSTRACT:
A semiconductor chip6is mounted on a flexible substrate1wherein internal connecting electrodes4to be connected to protruding electrodes7on an element surface of the semiconductor chip6and wires3for connecting the internal connecting electrodes4and the external connecting electrodes to be connected to external devices are provided on a surface of an insulating film2. The internal connecting electrodes4, the wires3and the surface of the insulating film2are coated with a protective film5. The protruding electrodes7and the internal connecting electrodes4are connected by arranging the element surface of the semiconductor chip6to face the flexible substrate1and causing the protruding electrodes7on the element surface to pierce the protective film5. This semiconductor device manufacturing method makes it possible to prevent ion migration and reduce occurrence of short circuit between wires.
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Chinese Office Action mailed Nov. 25, 2005 (w/English translation thereof).
Anya Igwe U.
Baumeister B. William
Nixon & Vanderhye P.C.
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