Method of manufacturing semiconductor device featuring...

Details Method of manufacturing semiconductor device featuring... Method of manufacturing semiconductor device featuring...

2005-08-23

2005-08-23

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S640000, C438S675000

Reexamination Certificate

active

06933229

ABSTRACT:
A semiconductor device and method of manufacturing the same are disclosed. A conductive structure, spacers and a dielectric layer are formed on a substrate. Thereafter, a portion of the cap layer, a portion of the spacers and a portion of the dielectric layer of the conductive structure are removed to form a funnel-shaped opening. The shoulder section of the conductive layer exposed by the funnel-shaped opening is removed to form a shoulder recess. A liner layer is formed on the sidewall of the funnel-shaped opening and then a bottom plug is formed inside the funnel-shaped opening. Another dielectric layer is formed over the substrate. A top plug is formed in the dielectric layer such that the top plug and the bottom plug are electrically connected. Finally, a wire line is formed over the substrate.

REFERENCES:
patent: 5565372 (1996-10-01), Kim
patent: 6066555 (2000-05-01), Nulty et al.
patent: 6235593 (2001-05-01), Huang
patent: 6806187 (2004-10-01), Graettinger et al.
patent: 2002/0105089 (2002-08-01), Tanaka
patent: 2003/0077909 (2003-04-01), Jiwari

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