Method of manufacturing semiconductor device and method of...

Details Method of manufacturing semiconductor device and method of... Method of manufacturing semiconductor device and method of...

2006-06-13

2006-06-13

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C438S942000, C438S952000

Reexamination Certificate

active

07060635

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device which includes a step of forming a laminated film for pattern formation on a substrate, in which the laminated film for pattern formation includes an innermost layer, an inner layer and a surface layer, an extinction coefficient k of the innermost layer is 0.3 or more, and an extinction coefficient k of the inner layer is 0.12 or more. It also provides a method of forming a pattern which includes a step of forming a laminated film for pattern formation on a substrate, in which the laminated film for pattern formation includes an innermost layer, an inner layer and a surface layer, an extinction coefficient k of the innermost layer is 0.3 or more, and an extinction coefficient k of the inner layer is 0.12 or more.

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Notification of the First Office Action dated Jun. 10, 2005.

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