Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-10-18
2005-10-18
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S747000, C438S748000, C438S750000
Reexamination Certificate
active
06955994
ABSTRACT:
A method of manufacturing a semiconductor device, including the steps of (a) rowing an InP layer on a surface of starting growth, resulting in the InP layer having a convex structure, and (b) wet etching the InP layer by an enchant including hydrochloric acid and acetic acid, and thereby flattening a surface of the InP layer.
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Copy of European Patent Office Communication including European Search Report for corresponding European Patent Office Application 01310826 dated Oct. 30, 2003.
Fujii Takuya
Ito Hiroaki
Watanabe Takayuki
Armstrong Kratz Quintos Hanson & Brooks, LLP
Fujitsu Quantum Devices Limited
Norton Nadine G.
Tran Binh X.
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