Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2009-04-21
2010-11-16
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S710000, C438S944000, C427S250000, C427S251000, C427S252000, C427S253000, C427S254000, C216S012000
Reexamination Certificate
active
07833909
ABSTRACT:
Aimed at suppressing roughening in a circumferential portion of a layer to be etched in the process of removing a hard mask formed thereon, an etching apparatus of the present invention has a process chamber, an electrode, a stage, and a shadow ring, wherein the process chamber allows an etching gas to be introduced therein; the electrode is disposed in the process chamber, and is used for generating plasma by ionizing the etching gas; the stage is disposed in the process chamber, onto which a substrate is disposed; the shadow ring has an irregular pattern on the inner circumferential edge thereof, and is disposed in the process chamber and placed above the stage30, so as to cover a circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner.
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McGinn IP Law Group PLLC
NEC Electronics Corporation
Nguyen Ha Tran T
Pathak Shantanu C
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