Method of manufacturing semiconductor device, and...

Details Method of manufacturing semiconductor device, and... Method of manufacturing semiconductor device, and...

2007-11-13

2010-12-28

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S655000, C438S682000, C257SE21165, C257SE21199, C257SE21438

Reexamination Certificate

active

07858517

ABSTRACT:
First, in a first step, a gate electrode is formed over a silicon substrate, with a gate insulation film therebetween. Next, in a second step, etching with the gate electrode as a mask is conducted so as to dig down a surface layer of the silicon substrate. Subsequently, in a third step, a first layer including an SiGe layer is epitaxially grown on the dug-down surface of the silicon substrate. Next, in a fourth step, a second layer including an SiGe layer lower than the first layer in Ge concentration or including an Si layer is formed on the first layer. Thereafter, in a fifth step, at least the surface side of the second layer is silicided, to form a silicide layer.

REFERENCES:
patent: 2004/0173815 (2004-09-01), Yeo et al.
patent: 2004/0266124 (2004-12-01), Roy et al.
patent: 2005/0282324 (2005-12-01), Ohuchi
patent: 2006/0134873 (2006-06-01), Koontz
patent: 2007/0221959 (2007-09-01), Zhu et al.
patent: 2002-530864 (2002-09-01), None

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