Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2007-08-24
2010-10-26
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S698000, C257S774000, C257SE23067, C257SE21597, C438S667000
Reexamination Certificate
active
07821105
ABSTRACT:
A silicon substrate has a protective film formed on each side. A semiconductor surface opening not smaller than a given region is formed by removing the protective film. A through-hole having an inner size smaller than the given region is formed in the opening by laser machining. Thereafter, the inner size of the through-hole is increased by anisotropic etching, and the etching is ended when the inner size of the through-hole reaches the given size. In this way, a through-hole of a given size can be formed without allowing reversely tapered crystal planes to appear from a surface of the substrate toward the inside of the through-hole.
REFERENCES:
patent: 4961821 (1990-10-01), Drake et al.
patent: 6563079 (2003-05-01), Umetsu et al.
patent: 6667551 (2003-12-01), Hanaoka et al.
patent: 6720661 (2004-04-01), Hanaoka et al.
patent: 6852621 (2005-02-01), Hanaoka et al.
patent: 7279776 (2007-10-01), Morimoto
patent: 2002/0151171 (2002-10-01), Furusawa
patent: 2005/0266687 (2005-12-01), Morimoto
patent: 2006/0040494 (2006-02-01), Hiatt
patent: 2002-210614 (2002-07-01), None
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Wilczewski Mary
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