Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-04-17
2010-10-26
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S075000, C257S913000, C257SE29003, C257SE29273, C257SE29277
Reexamination Certificate
active
07821005
ABSTRACT:
Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.
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Kajiwara Masayuki
Koezuka Junichi
Nakamura Osamu
Yamazaki Shunpei
Costellia Jeffrey L.
Cruz Leslie Pilar
Nixon & Peabody LLP
Purvis Sue
Semiconductor Energy Laboratory Co,. Ltd.
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