Method of manufacturing semiconductor device and...

Details Method of manufacturing semiconductor device and... Method of manufacturing semiconductor device and...

2011-04-05

2011-04-05

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S500000, C257SE29297

Reexamination Certificate

active

07919813

ABSTRACT:
Disclosed is a semiconductor device of n-type MOSFET structure, which comprises a semiconductor substrate having a device isolation region, diffusion regions formed in the semiconductor substrate, gate electrodes formed above the semiconductor substrate, and a F-containing NiSi layer formed on the diffusion regions and containing F atoms at a concentration of 3.0×1013cm−2or more in areal density, wherein a depth from the junction position formed between the diffusion region and the semiconductor substrate to the bottom of the F-containing NiSi layer is confined within the range of 20 to 100 nm, and the concentration of F atoms at an interface between the F-containing NiSi layer and the semiconductor substrate is 8.0×1018cm−3or more.

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