Method of manufacturing semiconductor device and...

Details Method of manufacturing semiconductor device and... Method of manufacturing semiconductor device and...

2005-11-08

2005-11-08

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S687000, C257S759000, C257S760000, C257S762000, C257SE23145

Reexamination Certificate

active

06962870

ABSTRACT:
A method of manufacturing a semiconductor device comprising forming a protective film on a surface of a lower-layer interconnection, and forming a multilayer-structured film by stacking a first porous film, a first non-porous film, a second porous film, and a second non-porous film on a surface of the protective film in this order, and forming a via hole and an interconnect trench. After a resist mask is removed, protective film exposed at a bottom of the via hole is removed. An upper-layer interconnection of dual damascene structure is formed by embedding an interconnect material in the via hole and the interconnect trench.The first non-porous film includes a first layer has a high etching selectivity ratio relative to the protective film, and a second layer has a high etching selectivity ratio relative to the resist mask and the second porous film.

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Hasegawa et al.; “Copper Dual Damascene Interconnects with Low-K (KEFF21 3.0) Dielectrics Using Flare™ and an Organo-Silicate Hard Mask”; International Electron Devices Meeting (IEDM), pp. 623-626, (1999).

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