Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-01
2005-03-01
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S305000
Reexamination Certificate
active
06861692
ABSTRACT:
A vertical MIS is provided immediately above a trench-type capacitor provided in a memory cell forming region of a semiconductor substrate, and a lateral nMIS is provided in the peripheral circuit forming region of the semiconductor substrate. After forming the capacitor, the lateral nMIS is formed. In addition, after forming the lateral nMIS, the vertical MIS is formed. Furthermore, after forming a capacitor, an isolation part of the peripheral circuit is formed.
REFERENCES:
patent: 4873560 (1989-10-01), Sunami et al.
patent: 6060723 (2000-05-01), Nakazato et al.
patent: 6635526 (2003-10-01), Malik et al.
patent: 5-110019 (1993-04-01), None
Kisu Haruko
Kisu Teruo
Kujirai Hiroshi
Matsuoka Hideyuki
Moniwa Masahiro
Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Hitachi ULSI Systems Co. Ltd.
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