Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2007-02-27
2008-11-04
Deo, Duy-Vu N (Department: 1792)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S326000, C430S327000, C430S328000, C430S329000, C430S330000
Reexamination Certificate
active
07445881
ABSTRACT:
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):(in the general formula (1), R1is a hydrogen atom or methyl group; R3is a cyclic group selected from an alicyclic group and an aromatic group; R4is a polar group; R2is a group represented by the following general formula (2); and j is 0 or 1):(in the general formula (2), R5is a hydrogen atom or methyl group).
REFERENCES:
patent: 5997952 (1999-12-01), Harris et al.
patent: 6270941 (2001-08-01), Yasunami
patent: 6280897 (2001-08-01), Asakawa et al.
patent: 6287746 (2001-09-01), Nakano et al.
patent: 6440636 (2002-08-01), Ushirogouchi et al.
patent: 6451501 (2002-09-01), Nozaki et al.
patent: 6673513 (2004-01-01), Choi et al.
patent: 6791117 (2004-09-01), Yoshitake et al.
patent: 6824957 (2004-11-01), Okino et al.
patent: 6825056 (2004-11-01), Asakawa et al.
patent: 6833230 (2004-12-01), Choi
patent: 6946233 (2005-09-01), Nishi et al.
patent: 2002/0187420 (2002-12-01), Barclay et al.
patent: 2004/0063024 (2004-04-01), Khojasteh et al.
patent: 2004/0202961 (2004-10-01), Takechi et al.
patent: 2005/0031990 (2005-02-01), Okino et al.
patent: 2005/0031991 (2005-02-01), Okino et al.
patent: 2005/0037283 (2005-02-01), Okino et al.
patent: 2005/0037284 (2005-02-01), Okino et al.
patent: 2005/0048400 (2005-03-01), Okino et al.
patent: 2005/0059787 (2005-03-01), Benoit et al.
patent: 4-354382 (1992-12-01), None
patent: 8-29636 (1996-02-01), None
patent: 2000-98612 (2000-04-01), None
patent: 2000-133837 (2000-05-01), None
patent: 2000-299494 (2000-10-01), None
patent: 2001-240625 (2001-09-01), None
patent: 2003-234290 (2003-08-01), None
Wolf et al., Silicon Processing for the VLSI Era, 1986, vol. 1, pp. 452-453.
U.S. Appl. No. 11/679,754, filed Feb. 27, 2007, Asakawa, et al.
U.S. Appl. No. 11/679,660, filed Feb. 27, 2007, Asakawa, et al.
Asakawa Koji
Fujimoto Akira
Ohashi Kenichi
Sasaki Takashi
Deo Duy-Vu N
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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