Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-02-25

1995-08-29

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 791, 437228, H01L 21306, C03C 1500, B44C 122, C23F 100

Patent

active

054457106

ABSTRACT:
A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.

REFERENCES:
patent: 4620898 (1986-11-01), Banks et al.
patent: 4704342 (1987-11-01), Lehrer
patent: 4820611 (1989-04-01), Arnold et al.
patent: 4904338 (1990-02-01), Kozicki
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5022959 (1991-06-01), Itoh et al.
patent: 5102498 (1992-04-01), Itoh et al.
patent: 5240554 (1993-08-01), Hori et al.
patent: 5302240 (1994-04-01), Hori et al.
J. Electrochem. Soc.; vol. 136, No. 4; Apr. 1989; pp. 1181-1185; T. R. Pampalone, et al.; "Improved Photoresist Patterning Over Reflective Topographies Using Titanium Oxynitride Antireflection Coatings".
J. Appl. Phys.; vol. 60, No. 3; Mar. 1979; pp. 1212-1214; H. A. M. Van Den Berg, et al.; "Antireflection Coatings on Metal Layers for Photolithographic Purposes".
Fiz Technik Datenbank Frankfurt; Abstract AN 2605230; "Hard Carbon Coatings for IR Optical and Heavy Duty Applications".
Journal of Technical Disclosure; No. 78-2427, vol. 3-12; 1978.12.20.
Solid State Technology; Apr. 1985; pp. 243-246; M. L. Hill, et al; "Advantages of Magnetron Etching".
Japanese Journal of Applied Physics; vol. 29, No. 10; Oct. 1990; pp. 2229-2235; K. Ono, et al.; "Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with CL2".
Solid State Technology; Feb. 1988; pp. 67-71; R. R. Burke, et al.; "Microwave Multipolar Plasma for Etching and Deposition".
IBM Technical Disclosure Bulletin; vol. 30, No. 10; Mar. 1988; pp. 402-406; "Carbonized Resist as Directly-Patternable Mask Absorber".
J. Vac. Sci. Technol. B6(6); Nov./Dec. 1988; pp. 1626-1631; Jin-Zhong Yu; "High-Rate Ion Etching of GaAs and Si at Low Ion Energy By Using An Electron Beam Excited Plasma System".
J. Vac. Sci. Technol. B6(1); Jan./Feb. 1988; pp. 284-287; R. Lossy, et al; "Characterization of a Reactive Broad Beam Radio-Frequency Ion Source".
Japanese Journal of Applied Physics; vol. 28, No. 11; Nov. 1989; pp. 2363-2367; S. Noda et al.; "MOS Gate Etching Using an Advanced Magnetron Etching System".
Appl. Phys. Lett. 55(2); Jul. 10, 1989; pp. 148-150; A. J. Perry, et al; "Fast Anisotropic Etching of Silicon in an Inductively Coupled Plasma Reactor".
Toshiba Review No. 143; Spring 1983; pp. 31-35; H. Ohano, et al.; "High-Rate Reactive Ion Etching Technology".
1990 Dry Process Symposium; pp. 105-109, 1990, T. Ohiwa, et al., "SiO.sub.2 Tapered Etching Employing Magnetron Discharge".
J. Appl. Phys. 65(2); Jan. 15, 1989; pp. 464-467; M. J. Cooke; "Anisotropy Control in CF.sub.4 Microwave Plasma Etching".
IBM Technical Disclosure Bulletin; vol. 27, No. 7A; Dec. 1984; p. 4102; K. L. Holland, et al; "Polyimide Adhesion to Pre-Treated Silicon Nitride Surfaces".
J. Vac. Sci. Technol. A4(3); May/Jun. 1986; pp. 698-699; V. Vukanovic, et al; "Summary Abstract: Polyimide Etching and Passivation Downstream of an 02-CF4-AR Microwave Plasma".
"Webster's II New Riverside University Dictionary"; C. 184; Hougton Mifflin Co.; Boston, Mass.; p. 970.
Japan Institute of Invention and Innovation, Journal of Technical Disclosure No. 78-2427.

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