Semiconductor device manufacturing: process – Forming schottky junction – Compound semiconductor
Patent
1999-04-13
2000-11-28
Bowers, Charles
Semiconductor device manufacturing: process
Forming schottky junction
Compound semiconductor
438574, 438182, 438640, 438949, H01L 2128, H01L 2144
Patent
active
061534994
ABSTRACT:
A first resist film for EB exposure, a buffer film, and a second resist film for i-line exposure are applied sequentially onto a substrate. Thereafter, the second resist film and the buffer film are subjected to patterning for forming a first opening. Then, dry etching is performed with respect to the first resist film masked with the second resist film to transfer the pattern of the second resist film to the first resist film and thereby form a second opening in the first resist film. Subsequently, a third resist film of chemically amplified type is applied to the entire surface of the first resist film to form a mixing layer in conjunction with the first resist film. As a result, the wall faces of the second opening are covered with the mixing layer and the width of the second opening is thereby reduced.
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Anda Yoshiharu
Inoue Kaoru
Matsuno Toshinobu
Nishii Katsunori
Tanabe Mitsuru
Bowers Charles
Matsushita Electric - Industrial Co., Ltd.
Nguyen Thanh
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