Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1999-04-13

2000-11-28

Bowers, Charles

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

438574, 438182, 438640, 438949, H01L 2128, H01L 2144

Patent

active

061534994

ABSTRACT:
A first resist film for EB exposure, a buffer film, and a second resist film for i-line exposure are applied sequentially onto a substrate. Thereafter, the second resist film and the buffer film are subjected to patterning for forming a first opening. Then, dry etching is performed with respect to the first resist film masked with the second resist film to transfer the pattern of the second resist film to the first resist film and thereby form a second opening in the first resist film. Subsequently, a third resist film of chemically amplified type is applied to the entire surface of the first resist film to form a mixing layer in conjunction with the first resist film. As a result, the wall faces of the second opening are covered with the mixing layer and the width of the second opening is thereby reduced.

REFERENCES:
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patent: 5006478 (1991-04-01), Kobayashi et al.
patent: 5583063 (1996-12-01), Anda et al.
patent: 5766967 (1998-06-01), Lai et al.
patent: 5776805 (1998-07-01), Kim
patent: 5858824 (1999-01-01), Saitoh
patent: 5930610 (1999-07-01), Lee
patent: 6051454 (2000-04-01), Anda et al.

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