Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Patent
1998-07-16
2000-11-28
Smith, Matthew
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
438400, 438404, H01L 2176
Patent
active
061534935
ABSTRACT:
A field oxide film which is fine and having smaller upheaval of a bird's head is formed, so as to improve electrical characteristic of a conductive layer formed with end portions positioned on the field oxide film. A planarizing silicon film is formed on a silicon nitride film and a thermal oxide film, so as to planarize a concave generated between the thermal oxide film and a silicon nitride film. The planarizing silicon film is thermally oxidized, so as to form a planarizing thermal oxide film integrated with the thermal oxide film. Thereafter, the planarizing thermal oxide film is etched back to form the field oxide film, and the silicon nitride film and a polycrystalline silicon film are removed. Thereafter, the conductive layer with end portions positioned on the field oxide film is formed.
REFERENCES:
patent: 5103273 (1992-04-01), Gill et al.
patent: 5252511 (1993-10-01), Bhan et al.
patent: 5338968 (1994-08-01), Hodges et al.
patent: 5397733 (1995-03-01), Jang
patent: 5447885 (1995-09-01), Cho et al.
patent: 5472905 (1995-12-01), Paek et al.
patent: 5508541 (1996-04-01), Hieda et al.
patent: 5543343 (1996-08-01), Bryant et al.
patent: 5668403 (1997-09-01), Kunikiyo
patent: 5792687 (1998-08-01), Jeng et al.
patent: 5942779 (1999-08-01), Okita
Makimoto Hiromi
Nakashima Moriyoshi
Ooi Makoto
Sumino Jun
Yuzuriha Kojiro
Lee, Jr. Granvill D.
Mitsubishi Denki & Kabushiki Kaisha
Smith Matthew
LandOfFree
Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1725102