Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1998-07-20

1999-11-30

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438743, 438744, 216 74, H01L 2100

Patent

active

059942274

ABSTRACT:
An improved etching method allowing the formation of a silicon nitride film with an adequate film thickness at the sidewall portion of a pattern is disclosed. A silicon nitride film formed to cover a stepped pattern is dry-etched, employing plasma of mixed gases containing CH.sub.2 F.sub.2 and O.sub.2. As a result, a sidewall spacer of the silicon nitride film is formed at the sidewall of the pattern in a self-aligned manner.

REFERENCES:
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5462896 (1995-10-01), Komura et al.
patent: 5726100 (1998-03-01), Givens

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