Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1996-07-18

1998-10-27

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 48, 438 53, 438977, H01L 2100

Patent

active

058277560

ABSTRACT:
A method of manufacturing a semiconductor device by which an element region for electronic circuits or the like is formed on the surface of a semiconductor substrate, a diaphragm region is formed in the bottom surface of the semiconductor substrate, and a plurality of openings having different areas and shapes are formed in the semiconductor substrate. The method includes a step of forming a first diaphragm region in the bottom surface of a semiconductor substrate, a step of partially forming a second diaphragm region in the first diaphragm region, the second diaphragm region being thinner than the first diaphragm region, and a step of forming an opening by removing part or the whole of the second diaphragm region.

REFERENCES:
patent: 4706374 (1987-11-01), Murakami
patent: 5110373 (1992-05-01), Mauger
patent: 5324688 (1994-06-01), Kondo
patent: 5484073 (1996-01-01), Erickson
patent: 5549785 (1996-08-01), Sakai et al.
"Sweep Rate Dependence of I-V Characteristics in Electrochemical Silicon Etch-Stop," by Ayahito Horinouchi et al., Technical Digest, 1990. pp. 19-22.

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