Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1996-07-17

1998-12-15

Goodrow, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438909, H01L 21321

Patent

active

058496319

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of: patterning a first passivation film on a semiconductor substrate; patterning a ball limiting metal film; patterning a second passivation film; performing a heat-treatment for hardening the second passivation film and annealing the ball limiting metal film; patterning a bump forming metal film; and wet-back processing the bump forming metal film. In this method, the heat-treatment may be performed in an atmosphere having an oxygen concentration of 50 ppm or less at a temperature of from 300.degree. to 400.degree. C. for 10 to 30 minutes. Additionally, at least one of the first and second passivation films may be a polyimide film, and the ball limiting metal film may has a three layer structure of a Ti layer, a Cu layer and an Au layer laminated from the bottom in this order.

REFERENCES:
patent: 4931410 (1990-06-01), Tokunaga et al.
patent: 5502010 (1996-03-01), Nadahara et al.
patent: 5554559 (1996-09-01), Wolters et al.
patent: 5587341 (1996-12-01), Masayuki et al.

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