Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2010-12-09

2011-12-27

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S689000, C257SE21235, C257SE21214

Reexamination Certificate

active

08084360

ABSTRACT:
In one embodiment, a method of manufacturing a semiconductor device includes forming a first film containing boron (B) on a member to be etched, the member being a semiconductor substrate, or a film formed on the semiconductor substrate, and forming a second film formed of a silicon oxide film on the first film. The method further includes pressing an original plate having a pattern formed in an uneven shape onto the second film to transfer the pattern to the second film, and etching the first film by using the second film where the pattern is transferred as a mask, with an etching gas that contains fluoromethane (CH3F) and oxygen (O2) and has an oxygen concentration of 50 to 90 at. %, to transfer the pattern to the first film. The method further includes etching the member by using the first film where the pattern is transferred as a mask, to form a concave portion having the pattern in the member.

REFERENCES:
patent: 2005/0069732 (2005-03-01), Kamata et al.
patent: 2008/0200026 (2008-08-01), Koh et al.
patent: 2010/0130011 (2010-05-01), Endoh et al.
patent: 2004203675 (2004-07-01), None
patent: 2006-303500 (2006-11-01), None
patent: 2009-111324 (2009-05-01), None

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