Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2010-10-01

2011-10-25

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S212000, C438S268000, C438S270000, C438S745000, C257S302000, C257SE21214, C257SE21228, C257SE21410

Reexamination Certificate

active

08043903

ABSTRACT:
A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first recess. The protruding portion has a sloped side surface. A first insulating film that fills the first recess is formed. A gate recess is formed in the active region to form a thin film portion that upwardly extends. The thin film portion is positioned between the gate recess and the first insulating film. The thin film portion is a part of the protruding portion. An upper part of the thin film portion is removed by wet-etching to adjust a height of the thin film portion.

REFERENCES:
patent: 2007/0246774 (2007-10-01), Chung et al.
patent: 2009/0267125 (2009-10-01), Mikasa et al.
patent: 09-232535 (1997-09-01), None
patent: 2007-158269 (2007-06-01), None
patent: 2007-194333 (2007-08-01), None
patent: 2007-258660 (2007-10-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4267823