Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-01-28

2010-02-02

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S584000, C438S634000, C438S689000, C257SE21680, C257SE21667

Reexamination Certificate

active

07655569

ABSTRACT:
The invention prevents a wiring layer in a memory region from being exposed to prevent a change in wire resistance and degradation of reliability. A SiO2film as an etching stopper film which transmits ultraviolet light is formed on pad electrodes and an interlayer insulation film. Then, the SiO2film on the pad electrodes is etched selectively and the SiO2film in an EPROM region is left. A silicon nitride film and a polyimide film are then formed on the SiO2film and on the pad electrodes where the SiO2film is removed, as a protection film which does not transmit ultraviolet light. The silicon nitride film and the polyimide film on the pad electrodes and in the EPROM region are then selectively removed by etching. Since the SiO2film functions as an etching stopper at this time, the interlayer insulation film under the SiO2film is prevented from being etched and a control gate line metal layer is prevented from being exposed.

REFERENCES:
patent: 4853761 (1989-08-01), Ikeda
patent: 2003/0080428 (2003-05-01), Izumitani et al.
patent: 2004/0166696 (2004-08-01), Lee
patent: 2005/0161825 (2005-07-01), Watanabe
patent: 2005-243127 (2005-09-01), None

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