Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-05-16

2010-12-14

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000

Reexamination Certificate

active

07851355

ABSTRACT:
To provide a technology capable of improving reliability and manufacturing yield of a semiconductor device by reducing variations of electrical characteristics in connection hole portions. After a semiconductor wafer is placed over a wafer stage provided in a chamber for dry cleaning treatment of a deposition system, dry cleaning treatment is performed to a principal surface of the semiconductor wafer by supplying reducing gas, sequentially, heat treatment is performed to the semiconductor wafer at a first temperature of 100 to 150° C. by a showerhead which is maintained at 180° C. Next, after the semiconductor wafer is vacuum transferred from the chamber to a chamber for heat treatment, heat treatment is performed to the semiconductor wafer at a second temperature of 150 to 400° C. in the chamber, thereby removing a product remaining over the principal surface of the semiconductor wafer.

REFERENCES:
patent: 5030319 (1991-07-01), Nishino et al.
patent: 6864183 (2005-03-01), Maekawa
patent: 2002/0036066 (2002-03-01), Ogawa et al.
patent: 2004/0097088 (2004-05-01), Kitayama et al.
patent: 2005/0230350 (2005-10-01), Kao et al.
patent: 2005/0266684 (2005-12-01), Lee et al.
patent: 2006/0137607 (2006-06-01), Seo et al.
patent: 02-256235 (1990-10-01), None
patent: 03-116727 (1991-05-01), None
patent: 2003-324108 (2003-11-01), None

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