Method of manufacturing semiconductor device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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Details

C430S311000, C430S322000, C430S323000, C430S324000

Reexamination Certificate

active

07811745

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material.

REFERENCES:
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6475891 (2002-11-01), Moon
patent: 6521941 (2003-02-01), Park et al.
patent: 6723607 (2004-04-01), Nam et al.

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