Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-09-26

2009-10-06

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S520000, C438S521000, C438S529000, C257SE21002

Reexamination Certificate

active

07598162

ABSTRACT:
It is an object to provide a method of manufacturing a semiconductor device capable of forming a MOS transistor of high performance, comprising the steps of forming a gate electrode on a semiconductor substrate via a gate-insulating film (step S1), introducing a impurity into the semiconductor substrate using the gate electrode as a mask (step S7), introducing a diffusion-controlling substance into the semiconductor substrate to control the diffusion of the impurity (step S8), forming a side wall-insulating film on each side surface of the gate electrode (step S9), deeply introducing impurity into the semiconductor substrate using the gate electrode and the side wall-insulating film as masks (step S10), activating the impurity by the annealing treatment using a rapid thermal annealing method (step S11), and further activating the impurity by the millisecond annealing treatment (step S12).

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patent: 2004-0010366 (2004-01-01), None

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