Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-02-10

2009-02-03

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S799000, C257SE21588, C257SE21496

Reexamination Certificate

active

07485575

ABSTRACT:
A semiconductor substrate is inserted into a heat treatment apparatus at a low temperature ranging from room temperature to about 50° C., and organic substances included in a metal on the semiconductor substrate are released without carbonization in an annealing process before CMP. Further, organic substances capable of preventing the corrosion of the metal are decomposed, and the organic substances themselves and chlorine, sulfuric acid, and ammonia which are included in the organic substances are diffused out of the metal film by setting the heat treatment apparatus at a rate of temperature rise of 15° C./min or less until a prescribed heat treatment temperature is reached.

REFERENCES:
patent: 6607982 (2003-08-01), Powell et al.
patent: 2005/0029109 (2005-02-01), Zhang et al.
patent: 2006/0216930 (2006-09-01), Feng et al.
patent: 11186261 (1999-07-01), None

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