Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-10-06

2009-02-03

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S637000, C438S672000

Reexamination Certificate

active

07485566

ABSTRACT:
A method of manufacturing a semiconductor device is provided. The method includes: (A) forming an insulating film with a porous structure on a substrate; (B) forming a trench in the insulating film, the trench being used for forming an interconnection; (C) depositing a metal layer over the insulating film such that the trench is filled in with the metal layer; (D) forming the interconnection by removing an excess metal layer outside the trench; (E) modifying a surface of the insulating film to form a modified layer on the insulating film; and (F) forming a metal film selectively on the interconnection by using plating solution after the (E) modifying process.

REFERENCES:
patent: 7253105 (2007-08-01), Dimitrakopoulos et al.
patent: 2006/0006530 (2006-01-01), Furusawa et al.
patent: 2006/0040490 (2006-02-01), Chen et al.
patent: 1832128 (2006-09-01), None
patent: 2000-200832 (2000-07-01), None
patent: 2002-43315 (2002-02-01), None
patent: 2005-79116 (2005-03-01), None
Chinese Office Action dated Jan. 18, 2008 with English Translation.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4117322