Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-11-30

2009-08-04

Coleman, W. David (Department: 4116)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S413000, C257SE21415, C257SE21564

Reexamination Certificate

active

07569438

ABSTRACT:
A method of manufacturing a semiconductor device that includes the steps of forming an oxide film on a surface layer section, forming a window section by selectively removing the oxide film, forming a first semiconductor layer, forming a second semiconductor layer, forming a pair of support member holes for exposing the substrate semiconductor layer, forming a support member on the active surface side of the semiconductor substrate, forming an end-exposed surface exposing at least a part of an end of the first semiconductor layer, forming a substrate semiconductor layer exposed surface, removing the first semiconductor layer below the support member by wet etching, filling a hollow section obtained by the wet etching with an oxide film using thermal oxidation, exposing the second semiconductor layer and providing a semiconductor device to the second semiconductor layer.

REFERENCES:
patent: 7425495 (2008-09-01), Kanemoto
patent: 7452781 (2008-11-01), Kanemoto
patent: 2007/0138512 (2007-06-01), Kanemoto
patent: 2008/0150075 (2008-06-01), Chang
patent: A 2006-108205 (2006-04-01), None
Sakai, T. et al. “Separation by Bonding Si Islands (SBSI) for LSI Applications.” Abstract of Second International SiGe Technology and Device Meeting, pp. 230-231 (2004).

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4082744