Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-03-03

2009-02-17

Dang, Trung (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C257SE21579

Reexamination Certificate

active

07491640

ABSTRACT:
In a dual damascene process to form a fine interconnection structure, a semiconductor manufacturing method includes: forming a first film to be etched on an insulating layer on a semiconductor substrate; forming a first mask film with an opening on the first film; forming a second film to be etched on the first mask film, burying the opening; forming a second mask film on the second film to be etched; forming an interconnection pattern in the second mask film in the upper portion of the opening; forming an interconnection pattern by etching the second film using the second mask film, forming a via pattern by etching the first film to be etched using the first mask film; and forming a via hole and an interconnection trench in the upper portion of the via hole in the insulating layer by selectively etching the insulating layer using the interconnection and via patterns.

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patent: 2008/0146029 (2008-06-01), Baks et al.
patent: 11-163143 (1999-06-01), None

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